N. Holonyak, Jr. : rechercher sur Z-Library

Année:

1978

Langue:

english

Fichier:

PDF, 582 KB

english, 1978

Growth and characterization of AlGaAs/GaAs quantum well lasers

R.D. Burnham, W. Streifer, T.L. Paoli, N. Holonyak Jr.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Année:

1984

Langue:

english

Fichier:

PDF, 1.10 MB

english, 1984

From transistors to light emitters

Holonyak, N., Jr.

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 536 KB

english, 2000

Semiconductor alloy lasers--1962

Holonyak, N., Jr.

Journal:

IEEE Journal of Quantum Electronics

Année:

1987

Langue:

english

Fichier:

PDF, 3.40 MB

english, 1987

The semiconductor laser: a thirty-five-year perspective

Holonyak, N., Jr.

Journal:

Proceedings of the IEEE

Année:

1997

Langue:

english

Fichier:

PDF, 353 KB

english, 1997

Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser

P.K. Kondratko, Shun-Lien Chuang, G. Walter, N. Holonyak, Jr., R.D. Heller, Xuebing Zhang, R.D. Dupuis

Journal:

IEEE Photonics Technology Letters

Année:

2005

Langue:

english

Fichier:

PDF, 156 KB

english, 2005

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2004 - San Jose, CA (Monday 26 January 2004)] Physics and Simulation of Optoelectronic Devices XII - Quantum well to quantum dot phonon-assisted tunneling

Chang, Shu-Wei W., Chuang, Shun-Lien, Holonyak, Jr., Nick, Osinski, Marek, Amano, Hiroshi, Henneberger, Fritz

Année:

2004

Langue:

english

Fichier:

PDF, 346 KB

english, 2004

Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions

P.D. Wright, E.A. Rezek, N. Holonyak Jr.

Journal:

Année:

1977

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1977

High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm)

P.E. Brunemeier, T.J. Roth, N. Holonyak Jr., G.E. Stillman

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 282 KB

english, 1984

Interface abruptness and dissolution-induced “damage” in LPE InGaAsP heterostructures

P.E. Brunemeier, K.C. Hsieh, D.G. Deppe, J.M. Brown, N. Holonyak Jr.

Journal:

Année:

1985

Langue:

english

Fichier:

PDF, 476 KB

english, 1985

Opto-electronic device structures fabricated by impurity induced disordering

R.L. Thornton, R.D. Burnham, T.L. Paoli, N. Holonyak Jr., D.G. Deppe

Journal:

Année:

1986

Langue:

english

Fichier:

PDF, 707 KB

english, 1986

Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing

P. Gavrilovic, F.P. Dabkowski, K. Meehan, J.E. Williams, W. Stutius, K.C. Hsieh, N. Holonyak Jr., M.A. Shahid, S. Mahajan

Journal:

Année:

1988

Langue:

english

Fichier:

PDF, 1.06 MB

english, 1988

Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

C.P. Kuo, R.M. Fletcher, T.D. Osentowski, M.G. Craford, D.W. Nam, N. Holonyak Jr., K.C. Hsieh, J.E. Fouquet

Journal:

R.J. Nelson, N. Holonyak Jr.

Année:

1988

Langue:

english

Fichier:

PDF, 1.39 MB

english, 1988

Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

Journal:

Journal of Physics and Chemistry of Solids

Année:

1976

Langue:

english

Fichier:

PDF, 1.01 MB

english, 1976

Solid solubility of Zn in Si

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Année:

1969

Langue:

english

Fichier:

PDF, 176 KB

english, 1969

Optical phase shift measurement of residual defects in vapor epitaxial GaAsP

H.R. Zwicker, D.R. Scifres, N. Holonyak Jr., R.D. Dupuis, R.D. Burnham, J.W. Burd, Zh.I. Alferov

Journal:

Année:

1971

Langue:

english

Fichier:

PDF, 362 KB

english, 1971

Defect and phonon effects in In1−χGaχP p-n tunnel junctions

H.W. Korb, A.M. Andrews, N. Holonyak Jr., R.D. Burnham, C.B. Duke, G.G. Kleiman

Journal:

Année:

1971

Langue:

english

Fichier:

PDF, 421 KB

english, 1971

Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3

R.D. Dupuis, N. Holonyak Jr., M.G. Craford, D. Finn, W.O. Groves

Journal:

Année:

1973

Langue:

english

Fichier:

PDF, 388 KB

english, 1973

The direct-indirect transition in In1−xGaxP

M.H. Lee, N. Holonyak Jr., W.R. Hitchens, J.C. Campbell, M. Altarelli

Journal:

Année:

1974

Langue:

english

Fichier:

PDF, 416 KB

english, 1974

Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)

J.J. Coleman, N. Holonyak Jr., A.B. Kunz, W.O. Groves, D.L. Keune, M.G. Craford

Journal:

Année:

1975

Langue:

english

Fichier:

PDF, 360 KB

english, 1975

Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87)

D.J. Wolford, B.G. Streetman, R.J. Nelson, N. Holonyak Jr.

Journal:

R.J. Nelson, N. Holonyak Jr.

Année:

1976

Langue:

english

Fichier:

PDF, 486 KB

english, 1976

Nitrogen trap bound states in In1−xGaxP

Journal:

Année:

1976

Langue:

english

Fichier:

PDF, 303 KB

english, 1976

Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å)

R.D. Dupuis, P.D. Dapkus, R.M. Kolbas, N. Holonyak Jr.

Journal:

Année:

1978

Langue:

english

Fichier:

PDF, 233 KB

english, 1978

Carrier collection in a semiconductor quantum well

H. Shichijo, R.M. Kolbas, N. Holonyak Jr., R.D. Dupuis, P.D. Dapkus

Journal:

Année:

1978

Langue:

english

Fichier:

PDF, 267 KB

english, 1978

Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω

R.M. Kolbas, N. Holonyak Jr., B.A. Vojak, K. Hess, M. Altareli, R.D. Dupuis, P.D. Dapkus

Journal:

Année:

1979

Langue:

english

Fichier:

PDF, 353 KB

english, 1979

The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures

B.A. Vojak, N. Holonyak Jr., W.D. Laidig, K. Hess, J.J. Coleman, P.D. Dapkus

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 399 KB

english, 1980

Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures

K. Hess, N. Holonyak Jr., W.D. Laidig, B.A. Vojak, J.J. Coleman, P.D. Dapkus

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 1.09 MB

english, 1980

Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures

W.D. Laidig, N. Holonyak Jr., M.D. Camras, B.A. Vojak, K. Hess, J.J. Coleman, P.D. Dapkus

Journal:

Année:

1981

Langue:

english

Fichier:

PDF, 356 KB

english, 1981

Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy

N. Holonyak Jr., W.D. Laidig, M.D. Camras, H. Morkoç, T.J. Drummond, K. Hess

Journal:

Année:

1981

Langue:

english

Fichier:

PDF, 306 KB

english, 1981

High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers

S.W Kirchoefer, N Holonyak Jr., K Hess, D.A Gulino, H.G Drickamer, J.J Coleman, P.D Dapkus

Journal:

Année:

1982

Langue:

english

Fichier:

PDF, 335 KB

english, 1982

Quantum well laser operation at low temperature in strong magnetic fields

P. Gavrilovic, K. Hess, N. Holonyak Jr., R.D. Burnham, T.L. Paoli, W. Streifer

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 254 KB

english, 1983

Absorption measurements at high pressure (0–10kbar) on strained superlattices

P. Garrilovic, K. Meehan, N. Holonyak Jr., K. Hess, W.P. Zurawsky, H.G. Drickamer, M.J. Ludowise, W.T. Dietze, C.R. Lewis

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 254 KB

english, 1983

Resonant tunneling in a GaAs1−xPx-GaAs strained-layer quantum-well heterostructure

P. Gavrilovic, J.M. Brown, R.W. Kaliski, N. Holonyak Jr., K. Hess, M.J. Ludowise, W.T. Dietze, C.R. Lewis

Journal:

Nick Holonyak Jr., S.F. Bevacqua

Année:

1984

Langue:

english

Fichier:

PDF, 310 KB

english, 1984

The red-black effect in Ga(As1−xPx)

Journal:

Année:

1964

Langue:

english

Fichier:

PDF, 85 KB

english, 1964

Gallium arsenide-phosphide: Crystal, diffusion and laser properties

C.J. Nuese, G.E. Stillman, M.D. Sirkis, N. Holonyak Jr.

Journal:

J.S. Moore, N. Holonyak Jr., M.D. Sirkis

Année:

1966

Langue:

english

Fichier:

PDF, 1.54 MB

english, 1966

Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodes

Journal:

Année:

1967

Langue:

english

Fichier:

PDF, 859 KB

english, 1967

GaAs junction lasers containing the amphoteric dopants Ge and Si

R.D. Burnham, P.D. Dapkus, N. Holonyak Jr., D.L. Keune, H.R. Zwicker

Journal:

Année:

1970

Langue:

english

Fichier:

PDF, 503 KB

english, 1970

Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP

D.R. Scifres, N. Holonyak Jr., R.D. Burnham, H.R. Zwicker

Journal:

A.M. Andrews, N. Holonyak Jr.

Année:

1971

Langue:

english

Fichier:

PDF, 734 KB

english, 1971

Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts

Journal:

Année:

1972

Langue:

english

Fichier:

PDF, 440 KB

english, 1972

Temperature dependence of threshold current for a quantum-well heterostructure laser

K. Hess, B.A. Vojak, N. Holonyak Jr., R. Chin, P.D. Dapkus

Journal:

Journal of Physics and Chemistry of Solids

Année:

1980

Langue:

english

Fichier:

PDF, 496 KB

english, 1980

Solid solubility of Zn in Si

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Année:

1970

Langue:

english

Fichier:

PDF, 451 KB

english, 1970

Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAsz

R.J. Nelson, N. Holonyak Jr., W.R. Hitchens, D. Lazarus, M. Altarelli

Journal:

Année:

1976

Langue:

english

Fichier:

PDF, 459 KB

english, 1976

Current oscillations in Zn-doped Si p-i-n diodes

M.M. Blouke, N. Holonyak Jr., B.G. Streetman, H.R. Zwicker

Journal:

Année:

1970

Langue:

english

Fichier:

PDF, 1022 KB

english, 1970

Optical phase shift measurement of carrier decay-time on thin semiconductor samples with surface losses

H.R. Zwicker, D.L. Keune, N. Holonyak Jr., R.D. Burnham

Journal:

Année:

1971

Langue:

english

Fichier:

PDF, 1.01 MB

english, 1971

Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers

N. Holonyak Jr., B.A. Vojak, R.M. Kolbas, R.D. Dupuis, P.D. Dapkus

Journal:

Année:

1979

Langue:

english

Fichier:

PDF, 544 KB

english, 1979

Alloy clustering and its effect on impact ionization in ternary III–V compounds

M.S. Burroughs, K. Hess, N. Holonyak Jr., W.D. Laidig, G.E. Stillman

Journal:

Année:

1982

Langue:

english

Fichier:

PDF, 638 KB

english, 1982

Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si

Hall, D.C., Deppe, D.G., Holonyak, N., Jr., Matyi, R.J., Shichijo, H., Epler, J.E.

Journal:

Moore, J.S., Holonyak, N., Jr., Sirkis, M.D.

Année:

1988

Langue:

english

Fichier:

PDF, 157 KB

english, 1988

Space-charge-limited emission and oscillation effects in gold-doped silicon p-"i"-n diodes

Journal:

Maher, A.T., Streetman, B.G., Holonyak, N., Jr.

Année:

1967

Langue:

english

Fichier:

PDF, 189 KB

english, 1967

Infrared detection properties of Zn-doped Si p-i-n diodes

Journal:

Année:

1969

Langue:

english

Fichier:

PDF, 273 KB

english, 1969

Gas plasma gun (GPG) electron-beam pumped semiconductor laser

Verdeyen, J.T., Johnson, W.L., Cherrington, B.E., Holonyak, N., Jr., Campbell, J.C., Lee, M.H., Craford, M.G.

Journal: